QTCAD featured in international paper "Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations"
Dear QTCAD community and quantum technology developers,
We are proud to be published in the selective and international Solid-State Electronics journal for our first collaborative paper featuring QTCAD.
Alongside our academic, industrial and government supporting partners in Canada and France: the Institut quantique – Université de Sherbrooke, STMicroelectronics, Ministère de l’Économie et de l’Innovation, Natural Sciences and Engineering Research Council of Canada (NSERC), the French CNRS and their own associates, we showcase the strong innovative and applicative capabilities of our spin-qubit modeling tool.
Free access (online and PDF) link to the article: Click here to access the direct link to the online article and downloadable PDF file.
In this paper, we present results on an advanced 28nm FD-SOI architecture at cryogenic temperature showing just a few of QTCAD’s features already functional and due to release: please check out our news and updates in the coming days as we will announce the release date of QTCAD which is a matter of weeks now!
QTCAD V1.0 will include a complete set of features to simulate your quantum device including unique possibilities to automatically refine your mesh, analyze quantum properties of your single electron or hole, and much more. Please check out here in Solutions for more information about QTCAD.
Thank you and congrats to the team of authors:
Mrs Ioanna Kriekouki (soon a PhD), Dr. Félix Beaudoin, Dr. Pericles Philippopoulos, Dr. Chenyi Zhou, Dr. Julien Camirand Lemyre, Dr. Sophie Rochette, Pr. Salvador Mir, Pr. Manuel J. Barragan, Pr. Michel Pioro-Ladrière, Pr. Philippe Galy