Adaptive meshing and cryogenic temperature modeling: QTCAD at its best!
We are very happy to have another article about QTCAD recently published in Applied Physics Letters!
We feature the 3D modeling of gated quantum dots at cryogenic temperature in an advanced decananometric device, in what is actually an extended paper version of our fruitful work achieved in collaboration with STMicroelectronics and Institut quantique – Université de Sherbrooke. We thank them very much again.
We published before in Solid States Electronics Letters about QTCAD’s potential to corroborate experimental results on such a FDSOI architecture, now in Applied Physics Letters, we show to the world how flawless and powerful our adaptive meshing feature is to simulate the electrostatics of quantum wells at sub-K temperature.
Have a good read!
DOI: 10.1063/5.0097202.
This article is freely accessible for 14 days so do not hesitate to go check it out!
Please note that this article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters (Vol.120, Issue 26) and may be found at https://lnkd.in/gduWqkYS
